Operation and Modeling of the MOS Transistor - Hardcover - Yannis Tsividis; Colin Mc. Andrew. PREFACECHAPTER 1: REVIEW OF FUNDAMENTALS AND MOSFET OVERVIEW1. Introduction. 1. 2 Semiconductors. Intrinsic Semiconductors, Free Electrons, and Holes. Extrinsic Semiconductors. Equilibrium in the Absence of Electric Field. Equilibrium in the Presence of Electric Field. Nonequilibrium; Quasi- Fermi Levels. Relations between Charge Density, Electric Field, and Potentials; Poisson's Equation. Conduction. 1. 3. Transit Time. 1. 3. Drift. 1. 3. 3 Diffusion. Total Current. 1. Contact Potentials. The pn Junction. 1. Overview of the MOS Transistor. Basic Structure. 1. A Qualitative Description of MOS Transistor Operation. A Fluid Dynamical Analog. Operation and Modeling of The MOS Transistor Second Edition Yannis Tsividis Columbia University New York Oxford OXFORD UNIVERSITY PRESS. MOS Transistor CHAPTER OBJECTIVES. 198 Chapter 6 MOS Transistor 6.2 COMPLEMENTARY MOS (CMOS) TECHNOLOGY. MOS Transistor Characteristics. Fabrication Processes and Device Features. A Brief Overview of This Book. Title: Operation And Modeling Of The Mos Transistor 4th Ed Author: Kathrin Abendroth Subject: operation and modeling of the mos transistor 4th ed Keywords: Get Instant Access to Read Books operation and modeling of the mos. Free Download OR Read Online to Books Operation And Modeling Of The Mos Transistor 4th Ed at our Complete and Best Library 1/2 Operation And Modeling Of The Mos Transistor 4th Ed Operation And Modeling Of The Mos Transistor. Title: Operation And Modeling Of The Mos Transistor 4th Ed Subject: Operation And Modeling Of The Mos Transistor 4th Ed Keywords: Download or Read Online operation and modeling of the mos transistor 4th ed PDF Created Date: 9. References. Problems. CHAPTER 2: THE MOS CAPACITOR2. Introduction. 2. 2 The Flatband Voltage. Potential Balance and Charge Balance. Effect of Gate- Body Voltage on Surface Condition. Flatband Condition. Accumulation. 2. 4. Depletion and Inversion. General Analysis. Accumulation and Depletion. Inversion. 2. 6. 1 General Relations and Regions of Inversion. Strong Inversion. Weak Inversion. 2. Moderate Inversion. Small- Signal Capacitance. Summary of Properties of the. Regions of Inversion. References. Problems. CHAPTER 3: THE THREE- TERMINAL MOS STRUCTURE3. Introduction. 3. 2 Contacting the Inversion Layer. The Body Effect. 3. Regions of Inversion. Approximate Limits. Strong Inversion. Weak Inversion. 3. Moderate Inversion. A . Body- Referenced Modeling. Effective Mobility. Effect of Extrinsic Sourceand Drain Series Resistances. Temperature Effects. Breakdown. 4. 1. 5 The p- Channel MOS Transistor. Enhancement- Mode and Depletion- Mode Transistors. Model Parameter Values, Model Accuracy, and Model Comparison. References. Problems. CHAPTER 5: SMALL- CHANNEL AND THIN OXIDE EFFECTS5. Introduction. 5. 2 Carrier Velocity Saturation. Channel Length Modulation. Charge Sharing. 5. Introduction. 5. 4. Short- Channel Devices. Narrow- Channel Devices. Limitations of Charge- Sharing Models. Drain- Induced Barrier Lowering. Punchthrough. 5. 7 Combining Several Small- Dimension Effects into One Model- -A Strong- Inversion. Example. 5. 8 Hot Carrier Effects; Impact Ionization. Velocity Overshoot and Ballistic Operation. Polysilicon Depletion. Quantum Mechanical Effects. DC Gate Current. 5. Junction Leakage; Band- to- Band Tunneling; GIDL5. Leakage Currents- -Particular Cases. The Quest for Ever- Smaller Devices. Introduction. 5. 1. Classical Scaling. Modern Scaling. References. Problems. CHAPTER 6: LARGE- SIGNAL MODELING OF THE MOS TRANSISTOR IN TRANSIENT OPERATION6. Introduction. 6. 2 Quasi- Static Operation. Terminal Currents in Quasi- Static Operation. Evaluation of Intrinsic Chargers in Quasi- Static Operation. Introduction. 6. 4. Strong Inversion. Moderate Inversion. Weak Inversion. 6. All- Region Model. Depletion and Accumulation. Plots of Charges vs. Including Noise in Small- Signal Circuits. All- Region Models. References. Problems. CHAPTER 8: SMALL- SIGNAL MODELING FOR HIGH- FREQUENCYOPERATION8. Introduction. 8. 2 A Complete Quasi- Static Model for the Intrinsic Part. Complete Description of Intrinsic Capacitance Effects. Small- Signal Equivalent Circuit Topologies. Evaluation of Capacitances. Frequency Region of Validity. Parameter Models. Non- Quasi- Static Models. Introduction. 8. 4. A Non- Quasi- Static Strong- Inversion Model. Other Approximations and Higher- Order Models. Model Comparison. High- Frequency Noise. Consideration in References. Problems. CHAPTER 9: SUBSTRATE NONUNIFORMITY AND OTHER STRUCTURAL EFFECTS9. Introduction. 9. 2 Ion Implantation and Substrate Nonuniformity. Substrate. Transverse Nonuniformity. Preliminaries. 9. Threshold Voltage. Drain Current. 9. Buried- Channel Devices. Substrate Lateral Nonuniformity. Well Proximity Effect. Stress Effects. 9. Statistical Variability. References. Problems. CHAPTER 1. 0: MODELING FOR CIRCUIT SIMULATION1. Introduction. 10. Types of Models. 10. Models for Device Analysis and Design. Device Models for Circuit Simulation. Attributes of Good Compact Models. Model Formulation. General Consideration and Choices. Model Implementation in Circuit Simulators. Model Testing. 10. Parameter Extraction. Simulation and. Extraction for RF Applications. Common MOSFET Models Available in Circuit Simulators. BSIM1. 0. 9. 2 EKV1. PSP1. 0. 9. 4 Other Models. References. Problems. APPENDICESA. Basic Laws of Electrostatic in One Dimension. B. Quasi- Fermi Levels and Currents. C. General Analysis of the Two- Terminal MOS Structure. D. Careful Definitions for the Limits of Moderate Inversion. E. General Analysis of the Three- Terminal MOS Structure. F. Drain Current Formulation Using Quasi- Fermi Potentials. G. Modeling Based on Pinchoff Voltage and Related Topics. H. Evaluation of the Intrinsic Transient Source and Drain Currents. I. Quantities Used in the Derivation of the Non- Quasi- Static y- Parameter Model. K. Analysis of. Buried- Channel Devices. L. MOSFET Model Benchmark Tests.
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